The plasma dry etching method is of evidently-reduced damage to the electrical performance of the allium nitride.
这样等离子体干法蚀刻对氮化镓的电气性能的损伤有显著降低。and finally changing the air pressure of a growth chamber to grow a gallium nitride layer.
最后改变生长室气压，生长一层氮化镓层。Gallium nitride single crystal is grown using flux 8 containing at least sodium metal.
通过使用至少含有钠金属的助熔剂8生长氮化镓单晶。Regular pyramids would form on then-GaN surface. We use KOH solution to be the etching solution of PEC process.
我们使用氢氧化钾溶液（KOH）当作PEC的蚀刻液去蚀刻N型氮化镓表面。The main part of the book deals with the production and characteristics of GaN LDs and LEDs.
三是与生产和氮化镓发光二极管激光器和特色的图书交易的主要部分。The measurement was achieved by deflecting GaN nanorods with a conductive atomic force microscope PtIr tip in contact.
这个实验是利用导电性原子力显微术去弯曲氮化镓奈米柱。Gallium nitride is a semiconductor used to create bright-blue LEDs.
氮化镓是一种用来生产亮蓝色LED的半导体。GaN will also give the warfighter significantly more mobility, capability and reliability on the battlefield.
氮化镓将给予作战人员在战场上更大的机动性、效能和可靠性。Gallium Nitride - New Material for Microwave and Optoelectronics.
氮化镓-微波与光电元件的新材料。