The transformer isolates the transistors with regard to d - c bias voltage .
变压器可在两个晶体管之间隔离直流 偏压.
The positive - going signal subtracts from the forward bias of the lower transistor.
正向信号则使它的正向偏压减弱.
With sufficient forward bias, the diffusion capacitance can easily exceed the space charge region capacitance.
当正向偏压足够高时, 扩散电容很容易超过空间电荷压电容.
The photo - current was found to closely follow the eletro - absorption at large reversebias values.
在很大的反向偏压下,光电流紧随着电吸收发生变化.
This is the resistor on which the negative bias is developed.
这是在其上面产生负偏压的电阻器.
Notice that this is no more complicated than the fixed bias example.
注意到这并不比固定偏压的例子复杂.
Avalanche photodiode APD bias circuit generated.
雪崩光电二极管APD的偏压产生电路.
Theforward bias for the base is usually taken from the same voltage source as the collector.
基极的顺向偏压通常是用和集极相同的电压源.
By varying the bias voltage , the activated energies of the discrete energy levels are obtained.
通过改变不同的反向偏压, 利用不同的测试频率可得出量子点中相应的空穴的激活能.
It is easily collapsed for shallow and unsymmetrical large - span tunnel near portal in soft rock.
软岩地区浅埋偏压大 跨度 隧道进口段极易塌方.
Negative - bias temperature instability ( NBTI ) is a major challenge for modern integrated circuits manufacture.
负偏压不稳定性 ( NBTI ) 已成为现代集成电路制造的巨大挑战.
The results showed that diffusion coefficient and diffusive distance increased with raising of negative substrate bias.
结果表明扩散系数和扩散距离都随着负衬底偏压的增大而增大.
The system of all - silicon laser is designed , which is based on silicon guide of PIN structure.
通过在硅波导上添加反向偏压的PIN结构, 建立了完整的全硅激光器系统.
Carbon nanotubes were synthesized by a negative substrate bias - enhanced hot filament chemical vapor deposition system.
利用负衬底偏压增强热灯丝化学气相沉积系统制备了碳纳米管.
ZrN thin films were prepared on 45 # steel by using ECR - microwave plasma source enhanced deposition.
利用ECR - 微波等离子溅射沉积技术不同偏压下在45 # 钢基体上制备了ZrN薄膜.